Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies

摘要

This paper investigates noise modeling of transferred-substrate indium phosphide double heterobipolar transistors (InP DUBTs). It is shown that the shot noise of these devices exhibits a pronounced correlation which allows for a reliable extrapolation of the noise performance based on standard noise measurement at lower frequencies, or even on the knowledge of small-signal model parameters alone.