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Ultrafast charge cooling and carrier multiplication in semiconductor nanocrystals and superlattices

机译:半导体纳米晶体和超晶格中的超快电荷冷却和载流子倍增

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We studied charge carrier photogeneration, cooling, carrier multiplication (CM) and charge mobility and decay in: a) isolated PbSe nanocrystals in solution, b) films of PbSe nanocrystals coupled by organic ligands, and c) 2D percolative networks of epitaxially connected PbSe nanocrystals. The studies were performed using ultrafast pump-probe spectroscopy with optical or terahertz/microwave conductivity detection. The effects of electronic coupling between the nanocrystals on charge mobility were characterized by frequency-resolved microwave and terahertz photoconductivity measurements. Reducing the size of ligand molecules between nanocrystals in a film strongly increases the charge mobility. Direct connection of nanocrystals in a percolative network yielded a sum of electron and hole mobilities as high as 270±10 cm~2V~(-1)s~(-1). We found that a high mobility is essential for multiple electron-hole pairs formed via CM to escape from recombination. The coupling between the nanocrystals was found to strongly affect the competition between cooling of hot charges by phonon emission and CM. In percolative networks of connected nanocrystals CM is much more efficient than in films with ligands between the nanocrystals. In these networks CM occurs in a step-like fashion with threshold near the minimum photon energy of twice the band gap.
机译:我们研究了载流子的光生化,冷却,载流子增殖(CM)以及电荷迁移率和衰变:a)溶液中分离的PbSe纳米晶体,b)有机配体耦合的PbSe纳米晶体薄膜,以及c)外延连接的PbSe纳米晶体的二维渗流网络。这项研究是使用超快泵浦光谱技术进行的,具有光学或太赫兹/微波电导率检测功能。通过频率分辨微波和太赫兹光电导率测量来表征纳米晶体之间的电子耦合对电荷迁移率的影响。减小膜中纳米晶体之间配体分子的大小会大大增加电荷迁移率。纳米晶体在渗流网络中的直接连接产生了高达270±10 cm〜2V〜(-1)s〜(-1)的电子和空穴迁移率。我们发现,高迁移率对于通过CM形成的多个电子-空穴对逃脱重组至关重要。发现纳米晶体之间的偶联强烈影响通过声子发射的热电荷的冷却与CM之间的竞争。在连接的纳米晶体的渗透网络中,CM比在纳米晶体之间具有配体的薄膜中更有效。在这些网络中,CM以阶梯状方式发生,其阈值接近带隙两倍的最小光子能量。

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