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Total Dose Radiation Response of n-Channel Enhancement Mode Field Effect Transistors over Wide Operation Temperature Range

机译:宽工作温度范围内n通道增强模式场效应晶体管的总剂量辐射响应

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摘要

Total dose radiation response of the n-channel 2N7002 transistors was examined at different temperatures. Voltage-current characteristics of the devices were measured before and after irradiation in wide temperature range from 80 K to 350 K.
机译:在不同温度下检查了n沟道2N7002晶体管的总剂量辐射响应。在80 K至350 K的宽温度范围内进行辐照之前和之后测量器件的电压-电流特性。

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