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Cobalt-Tin Intermetallic Compounds as Alternative Surface Finish for Low Temperature Die-to-Wafer Solder Stacking

机译:钴 - 锡金属间化合物作为低温模具焊料堆叠的替代表面光洁度

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Alternative surface structure on bottom pad formed by cobalt-tin intermetallic compounds has been investigated towards low temperature high through put die to wafer stacking. In this study, the plating conditions for cobalt and tin, which can maintain good within wafer and within die uniformity with ideal intermetallic compounds shape after reflowing, were optimized. The sharp needle Co-Sn intermetallic compounds are utilized for low temperature thermocompression bonding stacking, where high electrical yield was obtained in 20 µm interconnect pitch.
机译:通过钴 - 锡金属间化合物形成的底垫上的替代表面结构已经研究了低温高,通过将模具堆叠到晶片堆叠。 在该研究中,优化了钴和锡的电镀条件,其可以在晶片内保持良好,并且在回流后具有理想的金属间化合物形状的模均匀性。 尖锐针Co-Sn金属间化合物用于低温热压粘合堆叠,其中在20μm互连间距中获得高电产率。

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