Design and development of S band 10W And 20W power amplifier

摘要

In this work, GaN-HEMT based S-band (2.7 to 3.2 GHz) power amplifier design, fabrication, assembly and RF measurement results have been presented. The Wilkinson power combiner is providing IL 0.7dB (max) and Isolation 20dB (min). Designed single stage power amplifier is providing optimized performance, over desired band with 11dB small signal gain and 10 W CW power output with 46% PAE. Using the power combining technique a power amplifier has been designed and developed which is capable to deliver 10dB small signal gain and 20W CW output power with 47% PAE in the desired band. Extensive load pull and Co-EM simulation have been carried out for designing these circuits. Cree CGH40010F device is used for design of these MIC amplifiers.