Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET

摘要

We report a record setting low NMOS contact Rc of 2e Ωcm with an all-silicon based solution. The ultra-low contact resistivity of Ti/Si system of 2e Ωcm has been demonstrated with Highly Doped Si:P (HD Si:P) EPI layer which is compatible with FinFET S/D structures combined with millisecond laser anneal activation (DSA). Additionally, we show the pathway to further improve contact resistivity with HD Si:P using P implantation followed by laser anneal to reach the contact resistivity requirement for the 10nm or 7 nm nodes.