MoS2 FET fabrication and modeling for large-scale flexible electronics

摘要

We present a state-of-the-art fabrication technology and physics-based model for molybdenum disulfide (MoS) field effect transistors (FETs) to realize large-scale circuits. Uniform and large area chemical vapor deposition (CVD) growth of monolayer MoS was achieved by using perylene-3,4,9, 10-tetracarboxylic acid tetrapotassium salt (PTAS) seeding. Then, a gate first process results in enhancement mode FETs and also reduces performance variation and enables better process control. In addition, a Verilog-A compact model precisely predicts the performance of the fabricated MoS FETs and eases the large-scale integrated design. By using this technology, a switched capacitor DC-DC converter is implemented, and the measurement of the converter shows good agreement with the simulations.