A low-power 2Mb ReRAM macro was developed in 90 nm CMOS platform, demonstrating lower power data-writing (x1/7) and faster data-reading (x2~3) as compared to a conventional flash. The memory window at -6σ for 10 years was confirmed with a high-speed 1-bit ECC considering operating temperature ranging from -40 to 85 °C, where the worst conditions are high-temperature (85°C) “Off” writing and low-temperature (-40°C) “On” writing followed by high-temperature (85°C) retention. A pulse-modulated Off-state verify and an interface-control of Ru electrode are effective for suppressing random fluctuation of R readout and for sustaining the On-state retention, respectively.
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