To increase typically low output drive currents from Si Nanowire field-effect transistors (FETs), we show a GaN based GAA Nanowire FET's effectiveness. The theoretical study is focused on the three dimensional device designs, comparisons, random dopant fluctuation using IFM, and general variability issues including nanowire length, gate work function, and channel thickness are discussed. Performance of GaN GAA Nanowire is found to be increasing as Gate length is increased. Electrical characteristics of FETs including threshold voltage saturation, On/Off current ratio and sub threshold slope (SS) are analyzed. GaN GAA structure let to gate control ability improvement compared to Si based Nanowire in electrical performance. The GaN GAA Nanowire subthreshold slope is ～62mV/decade, which is close to the theoretical limit 60 mV/decade and leads to very high I_(on)/I_(off) ratio of 10~(10)-10~(11). The GaN GAA Nanowire is a very promising candidate for high-performance.
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机译：为了增加Si纳米线场效应晶体管（FET）的典型低输出驱动电流，我们展示了基于GaN的GAA纳米线FET的有效性。理论研究集中于三维器件设计，比较，使用IFM的随机掺杂物波动，并讨论了包括纳米线长度，栅极功函数和沟道厚度在内的一般可变性问题。发现GaN GAA纳米线的性能随着栅极长度的增加而提高。分析了FET的电学特性，包括阈值电压饱和度，开/关电流比和子阈值斜率（SS）。与基于Si的纳米线相比，GaN GAA结构可提高栅极控制能力。 GaN GAA纳米线的亚阈值斜率为〜62mV /十倍，接近理论极限60 mV /十倍，并导致很高的I_（on）/ I_（off）比为10〜（10）-10〜（11）。 。 GaN GAA纳米线是高性能的非常有希望的候选人。
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