Fabrication of integrated electrodes of molecular transistor by lithographic techniques and electromigration

摘要

Integrated electrodes of molecular transistor were obtained. Electrodes includes thin-film Au strips with a 2 - 3 run gap between them and Al gate electrode covered by Al_2O_3 oxide. The gap formation were made by electromigration technique and self-breaking process. Small (3-5 nm) gold nanoparticle were placed into the gap by self assembling. Ⅳ curves were measured at room temperature. These Ⅳ curves demonstrated single-electron conductivity of system. Such integrated system of electrodes is suitable to be the source-drain electrodes of planar single-electron transistors based on nano-particles or molecules.