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Low-Voltage CFOA with Bulk-Driven, Quasi-Floating-Gate and Bulk-Driven-Quasi-Floating-Gate MOS Transistors

机译:低压CFOA具有散装,准浮栅和散装 - 准浮栅MOS晶体管

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In this work, the low-voltage current feedback operational amplifier (CFOA) with bulk-driven, quasi-floating-gate (QFG) transistor and bulk-driven-quasi-floating-gate (QFG) transistor techniques to operate under low supply voltage is proposed. The proposed circuits were design based on the voltage follower and current follower while the output stages are designed base on the voltage follower. The CFOA circuits are designed by using the 0.18 μm CMOS technology and supply voltage operated 1 V. Simulation results shows output impedance of CFOA with bulk-driven, quasi-floating-gate (QFG) MOS transistor and bulk-driven-quasi-floating-gate (BD-QFG) MOS transistor are 55.72 ΩdB, 43.88 ΩdB, and 41.63 ΩdB, respectively. Finally, the proposed BD, QFG and BD-QFG MOS transistors techniques can used before the ultra-low voltage and low-power CFOA circuits.
机译:在这项工作中,低压电流反馈运算放大器(CFOA)具有散装驱动的准浮动 - 栅极(QFG)晶体管和散装驱动 - 准浮栅(QFG)晶体管技术在低电源电压下运行提出。所提出的电路是基于电压跟随器和电流从动件设计的,而输出级在电压跟随器上设计。 CFOA电路采用0.18μmCMOS技术和电源电压操作,电源电压为1 V.仿真结果显示CFOA的输出阻抗与散装驱动,准浮动门(QFG)MOS晶体管和散装驱动 - 准浮动 - 门(BD-QFG)MOS晶体管分别为55.72ΩdB,43.88Ωdb和41.63Ωdb。最后,所提出的BD,QFG和BD-QFG MOS晶体管技术可以在超低电压和低功耗CFOA电路之前使用。

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