Behaviour of n-MISISFET in nano-regime — TCAD simulation

摘要

A novel device n-MISISFET with a ‘dielectric stack’ instead of the single insulator of n-MOSFET has been described and its characteristics has been obtained in this paper. The desired variation of threshold voltage is obtained with forward and reverse body biasing for the novel n-MISISFET for various substrate doping concentrations. The device is based on the principle of resonant tunneling diode (RTD).