Fabrication of Si//patterned metal layer/Si junctions for hybrid multijunction solar cells with improved bonding interface properties

摘要

We successfully fabricate a p~+-Si//patterned Al in alignment to SiO_2/p~+-Si junction by surface-activated bonding (SAB) of a p~+-Si substrate and a patterned Al layer. We find that the interface resistance, which is 0.025 Ω·cm~2 in a junction annealed at 300°C, is much lower than p~+-Si/p~+-Si junction by SAB. This result shows the superiority of junctions using patterned metal layer to directly-bonded semiconductor.