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Effect of substrate temperature on high rate deposited ZnO∶Al films by magnetron sputtering

机译:衬底温度对磁控溅射高速率沉积ZnO∶Al薄膜的影响

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A series of ZnO∶Al (AZO) thin films was prepared on quartz at different substrate temperature using magnetron sputtering with high deposited rate of 67 nm/min.The structural,electrical and optical properties of these films were investigated as a function of substrate deposition temperature ranging from room temperature to 500 °C.The surface micrograph of AZO film deposited at room temperature was measured by a scanning electron microscope (SEM) and an atomic force microscope (AFM).The results of X-ray diffraction (XRD) test show that all the films have a (002) preferential orientation.The best electrical property was obtained at 500 °C,the resistivity was 9.044× 10-4 ohm·cm,and the corresponding carrier concentration and mobility were 3.379×1020/cm3 and 20.45 m2/Ns,respectively.What's more,all the films show a high optical transmittance.
机译:使用磁控溅射在不同衬底温度下在石英上制备了一系列ZnO∶Al(AZO)薄膜,沉积速率为67 nm / min。研究了这些薄膜的结构,电学和光学性质与衬底沉积的关系。温度范围为室温至500°C。通过扫描电子显微镜(SEM)和原子力显微镜(AFM)测量室温下沉积的AZO膜的表面显微照片.X射线衍射(XRD)测试的结果结果表明,所有薄膜均具有(002)择优取向。在500°C时具有最佳的电性能,电阻率为9.044×10-4 ohm·cm,相应的载流子浓度和迁移率为3.379×1020 / cm3和分别为20.45 m2 / Ns。此外,所有薄膜均显示出高透光率。

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