Analytical Drain Current Model For Damaged Gate All Around (GAA) MOSFET Including Quantum and Velocity Overshoot Effects

摘要

In this paper an analytical drain current model has been developed for Cylindrical Gate All Around (GAA) Si Nanowire MOSFET having interface fixed charges due to hot carrier/process/stress/radiation induced damage. The model also includes quantum and velocity overshoot effects. The effect of interface fixed charges on threshold voltage and drain current has been studied quantitatively and threshold voltage shift and change in off current are used to extract the density of fixed charges present at the Si-SiO_2 interface of the damaged device. Simulation results using ATLAS 3D device simulator are used to verify the validity of this model, and quite good agreement is obtained for various cases of channel length and channel radius.