Investigation on the Electric-Field-Induced Metal-Insulator Transition In Vox-Based Devices

摘要

A sandwich device structure of MIM (metal/insulator/metal) is designed and its metalinsulator transition induced by an external electric field is investigated. VOX films were deposited on several different substrates by dc magnetic sputtering at room temperature. The device of Pt/VOx/Cu/Ti/SiO2/Si exhibited steady bipolar resistance switching behaviors between high resistive state (HRS) and low resistive state (LRS) with 0.4V/0.3V operation voltages (SET/RESET), while the devices of Pt/VO/V7Cu/Ti/SiO2/Si, - Pt/VOx/Al/Ti/SiO2/Si and Pt/VOx/Pt/Ti/SiO2/Si didn't show this steady characteristic. From the comparison of these devices based on different substrates, the Schottky Emission model was quoted to explain this resistance switching characteristic in Pt/VOx/Cu/Ti/SiO2/Si device.