Test board for power FET's nonliner model extraction

摘要

The simple correction method is presented for the non-linear models of power FET's to be adjusted by means of measurements of transistors in a test board. The technique is based on measurement of the same transistor in 50 Ohm line and then in matching networks with known impedance realizing maximum gain factor at the operating point, and in a test circuitry adjusted for the maximum of output capacity.