首页> 外文会议>2011 21th International Crimean Conference Microwave and Telecommunication Technology >Comparison of Si and GaAs schottky detectors

【24h】

Comparison of Si and GaAs schottky detectors

机译：Si和GaAs肖特基探测器的比较

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Comparative investigation of Si and GaAs microwave detector diodes has been carried out.

机译：硅和砷化镓微波检测器二极管的比较研究已经进行。

著录项

来源
《2011 21th International Crimean Conference Microwave and Telecommunication Technology》|2011年|p.189-190|共2页
会议地点
作者
Varlashov I. B.; Shnitnikov A. S.; Gudkova N. B.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类无线电中继通信、微波通信;
关键词

相似文献

外文文献
中文文献
专利

1. Through-wafer optical communication using monolithic InGaAs-on-Si LEDs and monolithic PtSi-Si Schottky-barrier detectors [J] . Turner G.W., Chen C.K. IEEE Photonics Technology Letters . 1991,第8期

机译：使用单片InGaAs-on-Si LED和单片PtSi-Si肖特基势垒探测器的晶圆通光通信
2. On a GaAs-based transistor-type hydrogen sensing detector with a Pd/Al_(0.24)Ga_(0.76)As metal-semiconductor Schottky gate [J] . Yan-Ying Tsai, Ching-Wen Hung, Kun-Wei Lin, Semiconductor science and technology . 2006,第3期

机译：在具有Pd / Al_（0.24）Ga_（0.76）As金属半导体肖特基栅极的基于GaAs的晶体管型氢感测探测器上
3. Schottky contacts to high-resistivity epitaxial GaAs layers for detectors of particles and X- or γ-ray photons [J] . Koltsov G.I., Didenko S.I., Chernykh A.V., Semiconductors . 2012,第8期

机译：肖特基接触高阻外延GaAs层，用于粒子和X射线或γ射线光子探测器
4. Comparison of Si and GaAs schottky detectors [C] . Varlashov I. B., Shnitnikov A. S., Gudkova N. B. International Crimean Conference on Microwave Telecommunication Technology . 2011

机译：Si和Gaas Schottky探测器的比较
5. Simulation and Comparison of High Speed GaAsSb-InP and InGaAs-InP Uni-Traveling-Carrier Photodiodes [D] . Guneroglu, Ugur 2019

机译：高速GaAsSb-InP和InGaAs-InP单向载流子光电二极管的仿真与比较
6. Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications [O] . Abdul Manaf Hashim, Farahiyah Mustafa, Shaharin Fadzli Abd Rahman, 2011

机译：用于射频功率检测和低功率接收应用的双功能片上AlGaAs / GaAs肖特基二极管
7. Schottky barrier enhancement using reacted Ni2Al3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs, and NiAl/Al/Ni/n-GaAs contacts [O] . Chen, Charlie Chung-Ping, Chang, Y. Austin, Kuech, Thomas F. 1995

机译：使用反应的Ni2al3 / Ni / n-Gaas，Ni / al / Ni / n-Gaas和Nial / al / Ni / n-Gaas接触增强肖特基势垒
8. Through-Wafer Optical Communication Using Monolithic InGaAs-on-Si LED's andMonolithic PtSi-Si Schottky-Barrier Detectors [R] . Turner, G. W., Chen, C. K., Tsaur, B. Y., 1991

机译：使用单片InGaas-on-si LED和单片ptsi-si肖特基势垒探测器的穿晶片光通信

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

客服微信
服务号