首页> 外文会议>2011 International Symposium on VLSI Design, Automation and Test >High performance DDR architecture in Intel® Core™ processors using 32nm CMOS high-K metal-gate process
【24h】

High performance DDR architecture in Intel® Core™ processors using 32nm CMOS high-K metal-gate process

机译:英特尔®酷睿™处理器采用32纳米CMOS高K金属栅极工艺的高性能DDR架构

获取原文

摘要

This paper describes the DDR architecture in Intel® Core™ processors operating up to 1333MT/s and designed in 32nm process technology. The architecture uses adaptive techniques to achieve very low clock jitter (40% margin to spec), data scrambling to reduce simultaneous switching noise and novel training algorithms to improve I/O margins in the presence of crosstalk. A fast wakeup technique allows shutting down the receive path for finer grain power management, reducing standby power by 15%.
机译:本文介绍了采用32纳米制程技术设计,运行速度高达1333MT / s的英特尔®酷睿™处理器中的DDR架构。该体系结构使用自适应技术来实现极低的时钟抖动(达到规格的40%余量),数据加扰以减少同时的开关噪声,并采用新颖的训练算法来在存在串扰的情况下提高I / O余量。快速唤醒技术允许关闭接收路径,以进行更精细的谷物电源管理,从而将待机功耗降低了15%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号