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A 16b 80MS/s 100mW 77.6dB SNR CMOS pipeline ADC

机译:一个16b 80MS / s 100mW 77.6dB SNR CMOS流水线ADC

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摘要

The high channel count of many modern communication systems increasingly requires high-performance ADCs that consume very little power. The 16b pipeline ADC described here achieves 77.6dBFS SNR, 77.6dBFS SNDR and 95dBc SFDR at 80MS/s with a 10MHz input. With a 200MHz input, the ADC achieves 71.0dBFS SNR, 69.4dBFS SNDR and 81dBc SFDR. The complete ADC including reference, clock, and digital circuitry consumes 100mW from a 1.8V supply. This compares favorably with recently reported ADCs in this performance class [1–3]. In this paper, several architectural and circuit techniques used to achieve this performance are presented. The techniques include a dynamically driven deep N-well input sampling switch, an offset-cancelled comparator, and a back-gate voltage-biased MDAC amplifier. The ADC is fabricated in a 1P5M 0.18μm CMOS process with deep N-well (DNW) isolation.
机译:许多现代通信系统中的高通道数越来越多地需要消耗很少功率的高性能ADC。此处介绍的16b流水线ADC在10MHz输入下,在80MS / s时可达到77.6dBFS SNR,77.6dBFS SNDR和95dBc SFDR。输入为200MHz时,ADC可获得71.0dBFS SNR,69.4dBFS SNDR和81dBc SFDR。包括基准,时钟和数字电路在内的完整ADC的1.8V电源消耗100mW的功耗。这与最近报告的该性能等级的ADC相比具有优势[1-3]。在本文中,介绍了几种用于实现此性能的架构和电路技术。这些技术包括动态驱动的深N阱输入采样开关,偏移消除比较器和背栅电压偏置MDAC放大器。 ADC采用1P5M0.18μmCMOS工艺制造,具有深N阱(DNW)隔离。

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