Significant decrease of the interface state density by NH_3 plasma pretreatment at 4H-SiC (0001) surface and its bond configuration

摘要

We have investigated NH_3 plasma pretreatment for Si- and C-face 4H-SiC and characterized interface properties and bond configuration. It is revealed that the NH_3 plasma pretreatment is effective to reduce interface state density on C-face. From X-ray photoelectron spectroscopy (XPS) measurements, N- and H-related C bonds were observed. N and H passivate C-related defects and dangling bonds, resulting in improved interface properties.