Impacts of graphene/SiO2 interaction on FET mobility and Raman spectra in mechanically exfoliated graphene films

摘要

Field effect mobility of the graphene transferred on the SiO2/Si substrate scatters in various reports and is limited to a typical value of ∼10,000 cm2/Vs. Without understanding the interaction between graphene and SiO2, it is difficult to improve transport properties. This paper discusses effects of various plasma treatments and reoxidization of the SiO2 surface on graphene characteristics.