Very high performance non-volatile memory on flexible plastic substrate

摘要

We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 µW switching power (1.6 µA at 3 V; −0.5 nA at −2 V), excellent 105 cycling endurance, large on/off retention memory window >102 even at 85°C, and fast 50 ns switching for the first time. These were achieved using Ni/GeOx/HfON/TaN RRAM on low cost plastic that has simple MIM structure, low cost electrodes and covalent-bond-dielectric/metal-oxide.