Integration Challenges and Opportunities of Nanoelectronic Devices

摘要

Challenges and opportunities of nanoelectronic materials and devices are discussed under the situation in which most of such novel devices will be integrated on top of silicon CMOS platform. Ge and III-V channel created on silicon wafers, metal sulfide and metal oxide based resistance change memory in the interconnect layers and optical transmitter and receivers for optical interconnect are such examples of significant improvement of performance, functionality and power consumption reduction, which are reviewed for the progresses made and discussed from the view point of integration.