Charge Storage Characteristics of Hybrid Nanodots Floating Gate

摘要

The hybrid nanodots structure in which NiSi nanodots were stacked on Si-QDs with a very thin interlayer oxide was fabricated successfully and implemented to a MOS capacitor as a floating gate. The multiple charge storage in a deep potential well of NiSi nanodots and stepwise progression of charging and discharging in the hybrid nanodots FG have been demonstrated. The discrete energy states of the Si-QDs may play a role on the multistep electron injection to and emission from the NiSi nanodots.