Material Dependence of Negative Bias Temperature Instability (NBTI) Stress and Recovery in SiON p-MOSFETs

摘要

Negative Bias Temperature Instability (NBTI) is studied in Silicon Oxynitride (SiON) p-MOSFETs using a recently developed Ultra-Fast On-The-Fly linear drain current (UF-OTF I_(DLIN)) method. It is shown that both stress and recovery phases of NBTI are strongly influenced by SiON gate insulator process. Gate insulator nitrogen (N) spatial distribution is shown to impact interface trap generation (ΔN_(IT)) and hole trapping (ΔN_h) components of overall threshold voltage shift (ΔV_T). A simple, self consistent method is proposed to isolate ΔN_(TT) and ΔN_h. It is shown that the time dynamics of stress and recovery phases are strongly correlated, at short time governed by trapping and detrapping of holes, and at long time by generation and passivation of interface traps.