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Data conversion system for character projection-type low-energy electron beam direct writing system

机译:用于字符投影型低能量电子束直接写入系统的数据转换系统

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The EBIS data conversion system has been developed to be optimized for layout data of logic devices with Character Projection (CP) method. In the system, standard cells and memory cells are registered into a character database as keeping the hierarchy of cell pattern in the device pattern, so that a common CP aperture can be created for several logic devices. The order of EB shots are optimized to shorten the time of writing the patterns, small shots (sliver shots) create as few as possible, and the total number of EB shots are minimized for a specified CP aperture. The system was evaluated by processing ASIC devices of hp 180 nm, 130 nm and 90 nm nodes. The average processing time is about 1 hour with the average number of EB shots of 50 ?106 per a chip. The reduction rates of the number of shots from only conventional Variably Shaped Beam (VSB) to with CP were estimated about 80%, 45%, and 80% for the layers of front-end-of-line (FEOL), metal and via layers of back-end-of-line (BEOL), respectively.
机译:已经开发了EBIS数据转换系统,用于优化具有字符投影(CP)方法的逻辑器件的布局数据。在系统中,标准单元和存储器单元被登记为字符数据库,作为保持设备模式中的单元格模式的层次结构,从而可以为若干逻辑设备创建公共CP光圈。 EB拍摄的顺序经过优化,以缩短图案的写入时间,小幅射击(SLIVER SHOTS)尽可能少,并且EB拍摄的总数最小化为指定的CP光圈。通过处理HP 180nm,130nm和90nm节点的ASIC器件来评估系统。平均处理时间约为1小时,平均每芯片的EB射击数为50?106。对于常规可变成形光束(VSB)与CP的镜头数量的减小率估计为线上的前端(FEOL),金属和通孔层的约80%,45%和80%分别后端线(BEOL)层。

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