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Film Quantum Yields of EUV Ultra-High PAG Photoresists

机译:EUV和超高PAG光致抗蚀剂的薄膜量子产率

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Base titration methods are used to determine C-parameters for three industrial EUV photoresist platforms (EUV-2D, MET-2D, XP5496) and twenty academic EUV photoresist platforms. X-ray reflectometry is used to measure thedensity of these resists, and leads to the determination of absorbance and film quantum yields (FQY). Ultrahigh levelsof PAG show divergent mechanisms for production of photoacids beyond PAG concentrations of 0.35 moles/liter. TheFQY of sulfonium PAGs level off, whereas resists prepared with iodonium PAG show FQYs that increase beyond PAGconcentrations of 0.35 moles/liter, reaching record highs of 8-13 acids generated/EUV photons absorbed.
机译:基础滴定方法用于确定三个工业EUV光致抗蚀剂平台的C参数(EUV-2D,MET-2D,XP5496)和20个学术EUV光刻胶平台。 X射线反射测量法用于测量这些抗蚀剂的对照,并导致光吸收和薄膜量子产率(FQY)的测定。 PAG的超高级别显示出不同的机制,用于生产超出PAG浓度为0.35摩尔/升的PAG浓度。锍PAG的灰烬水平,而用碘鎓PAG制备的抗蚀剂展示过于0.35摩尔/升的Pagconcentation的FQYS,达到8-13酸的历史记录高度吸收/ EUV光子。

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