首页> 外文会议>MRS fall meeting >Nanostructured indium tin oxide for application in optoelectronic devices
【24h】

Nanostructured indium tin oxide for application in optoelectronic devices

机译:纳米结构的铟锡氧化物用于光电器件

获取原文

摘要

Nanostructured thin films of indium tin oxide were grown using glancing angle deposition, a physical vapour deposition technique which enables the preparation of columnar thin films with various morphologies. Indium tin oxide films consisting of vertical posts were electrically characterized using a probing station to determine their electrical resistivity. The nanostructured films were found to exhibit resistivities approximately two orders of magnitude greater than that of a normally evaporated film. However, development of the measurement technique is ongoing, and several ideas for improvement are described.
机译:使用掠射角沉积法生长铟锡氧化物的纳米结构薄膜,掠射角沉积法是一种物理气相沉积技术,能够制备具有各种形态的柱状薄膜。使用探测台对由垂直柱组成的铟锡氧化物薄膜进行电学表征,以确定其电阻率。发现纳米结构膜表现出的电阻率比正常蒸发的膜大约两个数量级。然而,测量技术的发展正在进行中,并且描述了一些改进的想法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号