Study of the Fabrication of ZnO-TFT

摘要

Znic Oxide ( ZnO) as a shorter wavelength luminescent material concerning its outstanding properties of a wide band-gap semiconductor, it can be used as the active channel layer to fabricate thin film transistor (TFT) and transparent thin film transistor(TTFT), In this paper, we introduced ZnO-TFT using different substrate material, insulator material, electrode material of gate, source and drain in its device.