SRAM SER in 90, 130 and 180 nm bulk and SOI technologies

摘要

We investigate the soft error rate (SER) of bulk and SOI SRAMs at the 90, 130 and 180 nm technology nodes. We use accelerated testing and Monte Carlo modeling to determine SER sensitivity to different radiation sources; we can therefore predict the product SER based on the radiation flux. Lifetests performed underground, near sea level, and at 10,000 feet confirm the predicted SER levels.