Modeling of NBTI degradation and its impact on electric field dependence of the lifetime

摘要

Negative Bias Temperature Instability of p-MOSFETs is investigated under various stress gate voltages and temperatures. It is shown that degradation tends to saturate and the dependence of lifetime on electric field (Eox) is expressed as a power-law of Eox. We propose new empirical and kinetic models. The Eox dependence of the lifetime described by the power-law is derived from our empirical model describing the saturation of degradation. Moreover, our kinetic model explains the saturation behavior.