Reliability assessment of ultra-thin HfO₂ oxides with TiN gate and polysilicon-n⁺ gate

摘要

In this paper, we propose an extended study of the reliability of ultra-thin HfO₂ oxides (EOT<1.5 nm) with polysilicon and TiN gate. Breakdown of the dielectric stacks is shown to be well correlated to trapping in the oxide or to SILC measurements, depending on the stress polarity. Long-term reliability of these high-K dielectrics is also analyzed. At same EOT, HfO₂ generally demonstrates higher reliability than SiO₂. On high quality stacks, a typical variation of T_BD with EOT is also emphasized.