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Impact of junction temperature on microelectronic device reliability and considerations for space applications

机译:结温对微电子器件可靠性的影响以及空间应用的注意事项

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The space community and other high reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters for decades to improve device reliability and extend operating life. Semiconductor technology scaling and process improvements, however, compel us to reassess common failure mechanisms and established derating guidelines to provide affirmation that common derating factors remain adequate for current technologies used in high reliability space applications. It is incumbent upon the user to develop an understanding of advanced technology failure mechanisms through modeling, accelerated testing, and failure analysis prior to product insertion in critical applications. This paper provides a summary of an industry survey on junction temperature derating from key microelectronics suppliers, and offers recommendations to users for temperature derating for reliable operation over time. Background information on established derating factors, and recommendations for safe operating junction temperatures for newer technologies are also presented.
机译:几十年来,空间界和微电子设备的其他高可靠性用户一直在降低结温和其他临界应力参数,以提高设备的可靠性并延长使用寿命。但是,半导体技术的扩展和工艺改进迫使我们重新评估常见的故障机制,并建立了降额指南,以确认常见的降额因素仍然足以满足高可靠性空间应用中使用的当前技术。用户有责任在关键应用中插入产品之前通过建模,加速测试和故障分析来了解高级技术故障机制。本文提供了来自主要微电子供应商的关于结温降额的行业调查的摘要,并为用户提供了降温的建议,以随着时间的推移可靠运行。还介绍了有关已确定的降额因素的背景信息,以及针对较新技术的安全工作结温的建议。

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