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Microstructure and Phase Compositions of Silicon Carbide Coatings Prepared by Plasma Spray-Vapor Deposition

机译:等离子体喷雾气相沉积制备的碳化硅涂层的微观结构和相组合物

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Silicon carbide (SiC) is one of the attractive ceramics in respect of its excellent properties both in wear and thermal shock resistance. In this study, SiC coatings were fabricated by Plasma Spray-Vapor Deposition (PS-VD) process under very low pressure. Effect of plasma gas composition on the coating phase composition and microstructure was studied. The coatings were characterized using scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results show that the coatings deposited by Ar/H_2 plasma gas presented a composite phase of SiC and Si. Moreover, the content of Si in the coating increased with the increase of the hydrogen content in plasma gas. The deposition of silicon is possibly attributed to the reaction of C and hydrogen species in plasma jet. Thus, it was found that pure dense SiC coating can be obtained by using Ar/N_2 plasma gas.
机译:碳化硅(SiC)是其在磨损和耐热抗震性的优异性能方面具有吸引力的陶瓷之一。在该研究中,通过等离子体喷涂气相沉积(PS-VD)工艺在非常低的压力下制造SiC涂层。研究了血浆气体组合物对涂布相组成和微观结构的影响。使用扫描电子显微镜(SEM)和X射线衍射(XRD)表征涂层。结果表明,Ar / H_2等离子体气体沉积的涂层呈现了SiC和Si的复合阶段。此外,随着等离子体气体中的氢含量的增加,涂层中Si的含量增加。硅的沉积可能归因于血浆射流中的C和氢物质的反应。因此,发现通过使用Ar / N_2等离子体气体可以获得纯致密的SiC涂层。

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