The energy and angular distributions of ground-state neutral atoms sputtered from the surface of a liquid Ga-In eutectic alloy by normally-incident 25 keV Ar~+ have been measured using the technique of sputter-initiated resonance ionization spectroscopy (SIRIS). Details of the measurements and data analysis are presented. Differences between the distributions for the Ga and In atoms are discussed in the context of the extreme Gibbsian segregation of the alloy surface.
展开▼
