首页> 外国专利> HIGH PURITY Co-Fe ALLOY SPUTTERING TARGET, MAGNETIC THIN FILM DEPOSITED BY USING SAME SPUTTERING TARGET AND METHOD FOR PRODUCING SAME HIGH PURITY Co-Fe ALLOY SPUTTERING TARGET

HIGH PURITY Co-Fe ALLOY SPUTTERING TARGET, MAGNETIC THIN FILM DEPOSITED BY USING SAME SPUTTERING TARGET AND METHOD FOR PRODUCING SAME HIGH PURITY Co-Fe ALLOY SPUTTERING TARGET

机译:高纯度钴铁合金溅射靶材,使用相同溅射靶材沉积的磁性薄膜和制备相同高纯度钴铁合金溅射靶材的方法

摘要

PROBLEM TO BE SOLVED: To provide a means for depositing a ferromagnetic film which has little leakage of gas and generation of particles on sputtering, has excellent corrosion resistance, and further has satisfactory magnetic properties.;SOLUTION: The high purity Co-Fe alloy sputtering target has an oxygen content of ≤30 ppm, and Al, Si and Cu contents respectively of ≤30 ppm. The magnetic thin film is deposited by using the same sputtering target.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供一种沉积铁磁性膜的方法,该膜在溅射时几乎不漏气且不产生颗粒,具有优异的耐腐蚀性,并且还具有令人满意的磁性能。;解决方案:高纯度钴铁合金溅射靶的氧含量为≤30ppm,并且Al,Si和Cu的含量分别为≤30ppm。使用相同的溅射靶沉积磁性薄膜。;版权所有:(C)2003,JPO

著录项

  • 公开/公告号JP2003027224A

    专利类型

  • 公开/公告日2003-01-29

    原文格式PDF

  • 申请/专利权人 NIKKO MATERIALS CO LTD;

    申请/专利号JP20010217524

  • 发明设计人 SHINDO YUICHIRO;

    申请日2001-07-18

  • 分类号C23C14/34;C23C14/14;H01F10/16;H01F41/18;

  • 国家 JP

  • 入库时间 2022-08-22 00:13:35

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