首页> 外文会议>Advances in Cryogenic Engineering Materials >HIGH FIELD PERFORMANCE OF CONVENTIONALLY PROCESSED NIOBIUM-TITANIUM CONDUCTORS CONTAINING ARTIFICIALLY-INTRODUCED NIOBIUM PINNING SITES
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HIGH FIELD PERFORMANCE OF CONVENTIONALLY PROCESSED NIOBIUM-TITANIUM CONDUCTORS CONTAINING ARTIFICIALLY-INTRODUCED NIOBIUM PINNING SITES

机译:包含人工插入铌钉扎点的常规加工铌钛导体的高场性能

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Artificial Pinning Center (APC) technology was developed as a means to improve the performance of NbTi conductors through control of the amount and distribution of the flux pinning phase. Unfortunately, the high field performance of APC conductors has almost invariably been inferior to that of conventionally processed conductors, at least in part due to depressed upper critical field. Supercon has investigated a method for improving high field performance in NbTi conductors through a combination of APC technology and conventional processing. A small volume percentage of Nb pinning material was artificially introduced into standard Nb47Ti* alloy. The percentage was chosen such that the average overall composition was Nb44Ti, an alloy which is known to have a higher upper critical field than Nb47Ti. The resulting composite was multiply restacked and processed to wire. Conventional precipitation heat treatments were applied during final processing. In addition to providing higher upper critical field, the added Nb was expected to contribute to pinning above and beyond that provided by the precipitated a-Ti. Improved high field critical current densities relative to a control were observed. The results of the investigation, including critical current density (J_c), upper critical field (H_(c2)), and critical temperature (T_c) data, are presented.
机译:开发人造钉扎中心(APC)技术作为通过控制磁通钉渗阶段的量和分布来改善NBTI导体性能的手段。不幸的是,APC导体的高场性能几乎总是不如传统的处理导体的那些,至少部分地由于凹陷的上部临界场。 SuperCon通过APC技术和传统处理的组合研究了一种改进NBTI导体中的高场性能的方法。人工将Nb钉扎材料的小体积百分比人工引入标准NB47Ti *合金中。选择百分比使得平均整体组合物是Nb44Ti,该合金已知具有比Nb47Ti更高的临界场的合金。由所得复合材料复次恢复并加工到电线。在最终加工期间施加常规的沉淀热处理。除了提供更高的上部临界场外,预期添加的NB是有助于沉淀到沉淀的A-Ti提供的钉扎。观察到改善高场临界电流密度相对于对照。呈现了调查结果,包括临界电流密度(J_C),上临界场(H_(C2))和临界温度(T_C)数据。

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