Synchrotron radiation process and in-situ observation technique: infrared reflection absorption spectroscopy

摘要

Abstract: Synchrotron radiation (SR) stimulated etching shows unique material selectivities. SR decomposition of silicon hydrides on Si(100) surface measured by IR reflection absorption spectroscopy also shows unique reaction selectivities; SiH$- 2$/ and SiH$-3$/ are decomposed but SiH is not. These material selectivities are qualitatively explained by the quenching of the excited electronic states. The material selectivity, reaction selectivity by the excitation energy tuning to the specific core electron excitations, and extremely high spatial resolutions owing to the short wavelength nature, SR stimulated etching is a potentially powerful technique for the nanometric processes. !5