Improved selective growth of InP around dry-etched mesas by LP-MOCVD at low growth temperature

摘要

We applied a high-speed rotating-disk MOCVD reactor to the selective embedding growth around the mesas formed by reactive ion etching (RIE), and investigated the growth conditions which give planar embedding around the mesas. It is shown that almost planar embedding growth can be achieved even at low growth temperature without introducing any chlorine compounds. Moreover, we discuss the effects of dopants on the behaviors in the selective embedding growth. Special attention has been focused on the growth on the side walls of the nearly-rectangular mesas as well as that near the edges of the masks.