Highly efficient low temperature growth of GaInP in a planetary MOVPE system using tertiarybutylphosphine (TBP)

摘要

We describe the use of tertiarybutylphosphine (TBP) as a group V precursor for the growth of GaInP. Growth has been carried out of in a multiwafer MOVPE Planetary Reactor. The results demonstrate that very low growth temperatures together with low V/III ratios can be used. The growth efficiency of this gas is very high compared to the standard group V precursor phosphine. Characterization of the GaInP layers by DCXD, photoluminescence and Hall measurements reveal their excellent crystalline, electrical and optical properties.