Electrical properties of the hydrogen defect in InP and the microscopic structure of the 2316 cm/sup -1/ hydrogen related line

摘要

We have shown that in H/sub 2/-D/sub 2/ codoped InP samples a splitting of the 2315.6 cm/sup -1/ hydrogen related local vibrational mode is observed. This provides further evidence for the assignment of this line to a fully hydrogenated indium vacancy. Based on a simple argument we suggest that this defect shows electrical activity as a donor in agreement with previously reported results. We observe that this defect is lost during annealing under P-overpressure which has been shown to result in semi-insulating material. We suggest that the loss of intrinsic donors is due to the reduction of the VH/sub 4/ defect associated with the 2315.6 cm/sup -1/ line.