Effect of (GaP)/sub m//(InP)/sub m/ short period binary superlattice period on quantum wire formation by strain induced lateral layer ordering in GaInP/AlInP multi-quantum-wire lasers

摘要

Optical anisotropy of the GaInP/AlInP compressively strained multi-quantum wire lasers fabricated by the strain induced lateral layer ordering process in (GaP)/sub m/(InP)/sub m/ short period binary superlattice layers, which is a very effective method to fabricate GaInP/AlInP compressively strained quantum wire lasers through gas source molecular beam epitaxy, was investigated systematically by changing (GaP)/sub m//(InP), superlattice period (i.e. monolayer number m). A drastic reduction in threshold current density (J/sub th/) was obtained at m of 1.5 and anisotropic lasing characteristics were intensified with increasing m values. Moreover the low J/sub th/ value of 278A/cm/sup 2/ was obtained at m of 1.5 ML with a cavity length of 794 /spl mu/m.