首页> 外文会议>Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on >Characterization of semiconducting thin films on InP for magneto-optical applications
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Characterization of semiconducting thin films on InP for magneto-optical applications

机译:用于磁光应用的InP上半导体薄膜的表征

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We have investigated the properties of thin film magneto-optical materials grown in the III-V materials system. These materials can be used to expand the functionality of InP opto-electronic integrated circuits (OEIC). Magneto-optical (MO) materials possess unique properties which have already found applicability (in bulk form) in optical systems such as isolators, waveguides, and switches. The materials in this study are epitaxial InGaAs, InGaAsP, and InP films lattice-matched to InP substrates. These films were doped with Mn or Eu with concentrations of 1.3/spl times/10/sup 20/ and 1.5/spl times/10/sup 20/ cm/sup -3/, respectively. The optical and electrical properties of these films agree with expected values, and they show promise for MO applications. In addition, waveguiding has been achieved in InGaAsP films.
机译:我们已经研究了在III-V材料系统中生长的薄膜磁光材料的特性。这些材料可用于扩展InP光电集成电路(OEIC)的功能。磁光(MO)材料具有独特的特性,这些特性已经在隔离器,波导和开关等光学系统中发现了(批量使用)。本研究中的材料是与InP衬底晶格匹配的外延InGaAs,InGaAsP和InP薄膜。这些膜用浓度分别为1.3 / spl×10 / sup 20 /和1.5 / spl×/ 10 / sup / 20 / cm / sup -3 /的Mn或Eu掺杂。这些薄膜的光学和电学性质与预期值相符,并显示出对MO应用的希望。另外,在InGaAsP膜中已经实现了波导。

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