Spontaneous formation of aligned InGaAs quantum dots on GaAs multi-atomic steps by metalorganic chemical vapor deposition growth

摘要

The InGaAs quantum dots were grown on a multi-atomic step structure by MOCVD. AFM images indicated that these quantum dots are grown not on the terrace but on the multi-atomic step edges. Using this phenomenon, we demonstrate successful alignment of the InGaAs quantum dots by spontaneous growth without any pre-processing technique. Finally, formation of twin InGaAs quantum dots was demonstrated.