Analysis of Electrical Performance of 1200V/200A Full SiC Power Module

摘要

Silicon carbide (SiC) module with high power, high frequency, large current characteristics, has received extensive attention in the new energy vehicles, the new energy power generation, the smart grid and other fields.Electrical characteristics of the 1200V/200A SiC module are analyzed by the finite element simulation method in this paper. Based on the simulation results, a low-inductance and high-reliability SiC module is developed. The parasitic inductance of SiC module is 18.846nH, and the threshold voltage (Vth) is 2.0V, and the change is less than 0.1v before and after aging test. The high temperature gate bias test (HTGB) and high temperature reverse bias test (HTGB) have verified that SiC module still has good stability after a long-time experiment at 150°C and 175°C. After the HTGB, the gate leakage current of SiC module is still below 400nA, and the power consumption increases little. Moreover, after the HTRB, the leakage current of SiC module shows excellent stability, which proves that the SiC module can work at high voltage and high temperature.