Mechanism and Model Analysis of IGBT Displacement Current

摘要

Based on the working mechanism and physical model of IGBT, the displacement current caused by external voltage change in off state is studied. The generation mechanism of displacement current and the gate wrong turn on caused by the displacement current are studied, and a prediction model for charging the gate by the displacement current is established. Finally, the accuracy of theoretical analysis is verified by experimental tests. The model has practical value for guiding the engineering application of IGBT.