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Modelling and analysis of current sensors for N-channel, vertical IGBTs

机译:用于N沟道垂直IGBT的电流传感器的建模和分析

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The static and dynamic performance of integrated current sensors in 500V, n-channel, asymmetric, vertical IGBTs are modelled and experimentally characterized. Two different current sensor structures are studied and compared. The active IGBT pilot shows more linear tracking of the main current with small pilot load resistor but the passive pilot is less susceptible to debiasing effect for a large resistor. During turn-on, the active pilot leads the main current due to RC delay whereas the passive pilot lags due to minority carrier diffusion.
机译:对集成电流传感器在500V,n通道,非对称,垂直IGBT中的静态和动态性能进行了建模和实验表征。研究并比较了两种不同的电流传感器结构。有源IGBT导频在较小的导频负载电阻下显示出对主电流的更多线性跟踪,但对于较大的电阻,无源导频不易受到去偏置影响。在导通期间,由于RC延迟,主动导频领先于主电流,而由于少数载流子扩散,被动导频滞后。

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