Deposition High Quality P-type Microcrystalline Silicon Thin Films by RF-PECVD

摘要

P-type (boron-doped) microcrystalline silicon $(mu mathrm{c}-mathrm{Si}:mathrm{H})$ thin films were fabricated by plasma-enhanced chemical vapor deposition at 13.56MHZ (RF-PECVD) in this work. The factors affecting the film properties, such as pressure, power and doping ratio, were studied in this paper. After parameters optimization, we got a $mathrm{pc}-mathrm{Si}:mathrm{H}$ film with a thickness of 33 nm, a dark-conductivity of 1.81 $mathrm{S}cdot mathrm{cm}-1$, an activation energy of 25 meV and a crystalline ratio of 57%. In addition, p-type $mu mathrm{c}-mathrm{Si}: mathrm{films}$ with various crystalline ratio had been applied in single-junction μc-Si solar cells. The results indicated that high crystalline p-layers could enhance the i-layer crystalline ratio and it might be contribute to the reducing of the incubation layer thickness. The crystalline ratio of p-layer should exceed 30% to reduce the influence on i-layer's crystalline ratio.