Development of a highly integrated 10 kV SiC MOSFET power module with a direct jet impingement cooling system

摘要

High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and low parasitic inductance. High-density packaging of high voltage semiconductors, such as 10kV SiC MOSFETs, has brought additional challenge. This work proposes a wire-bond-less, highly integrated planar SiC half-bridge module, with embedded decoupling capacitors and a high performance integrated thermal management system.